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DISCRETE SEMICONDUCTORS
DATA SHEET
BFC520 NPN wideband cascode transistor
Product specification Supersedes data of 1996 Oct 08 File under Discrete Semiconductors, SC14 1997 Sep 10
Philips Semiconductors
Product specification
NPN wideband cascode transistor
FEATURES * Small size * High power gain at low bias current and high frequencies * High reverse isolation * Low noise figure * Gold metallization ensures excellent reliability * Minimum operating voltage VC2-E1 = 1 V. APPLICATIONS * Low noise, high gain amplifiers * Oscillator buffer amplifiers * Wideband voltage-to-current converters.
b1
BFC520
PINNING - SOT353 SYMBOL b2 e1 b1 c1/e2 c2 PIN 1 2 3 4 5 base 2 emitter 1 base 1 collector 1/emitter 2 collector 2 DESCRIPTION
handbook, halfpage
5
4 b2
c2
c1/e2
DESCRIPTION Cascode amplifier with two discrete dies in a surface mount, 5-pin SOT353 (S-mini) package. The amplifier is primarily intended for low power RF communications equipment, such as pagers and cordless phones and has a very low feedback capacitance resulting in high isolation.
1 Top view
2
3 e1
MAM212
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA VC2-E1 = 3 V; IC = 20 mA; VB2 = 2.1 V; b2 connected to ground via 1 nF (0603) capacitor, e1 connected directly to ground. SYMBOL Cre s 21 s 12 MSG F Rth j-s
2
PARAMETER feedback capacitance CB1-C2 maximum isolation maximum stable power gain (narrowband) noise figure thermal resistance from junction to soldering point
CONDITIONS f = 900 MHz; Tamb = 25 C f = 2 GHz; Tamb = 25 C f = 900 MHz; Tamb = 25 C f = 2 GHz; Tamb = 25 C IC = 5 mA; f = 900 MHz; S = opt single loaded double loaded
MIN. - - - - - - - -
TYP. - -63 -38 31 19 1.3 - -
MAX. 10 - - - - 1.6 230 115
UNIT fF dB dB dB dB dB K/W K/W
1997 Sep 10
2
Philips Semiconductors
Product specification
NPN wideband cascode transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. - - - - up to Ts = 60 C; note 1 - -65 -
BFC520
MAX.
UNIT
Any single transistor VCBO VCEO VEBO IC Ptot Tstg Tj collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature open emitter open base open collector 20 8 2.5 70 1 +175 175 V V V mA W C C
THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point; note 1 single loaded double loaded CONDITIONS VALUE 230 115 UNIT K/W K/W
Note to the Limiting values and Thermal characteristics 1. Ts is the temperature at the soldering point of the collector pin.
1997 Sep 10
3
Philips Semiconductors
Product specification
NPN wideband cascode transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS IC = 2.5 A; IE = 0 IE = 2.5 A; IC = 0 IE = 0; VCB = 6 V IC = 20 mA; VCE = 6 V IC = 20 mA; VC2-E1 = 3 V; f = 1 GHz IE = ie = 0; VC2-B2 = 1 V; f = 1 MHz IC = 0; VC2-E1 = 3 V; f = 1 MHz IC = 0; VC2-E1 = 3 V; f = 1 MHz MIN. TYP. - - - - 120
BFC520
MAX. - - - 50 250 - - - 10 - - - - - - 1.6 -
UNIT
DC characteristics of any single transistor V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE fT Cc Cre2 Cre MSG collector-base breakdown voltage emitter-base breakdown voltage collector-base leakage current DC current gain 20 8 2.5 - 60 - - - - - - - - - - - - V V V nA collector-emitter breakdown voltage IC = 10 A; IB = 0
AC characteristics of the cascode configuration transition frequency collector capacitance T2 feedback capacitance T2 feedback capacitance 7 0.55 500 - 31 19 17 13 63 38 1.3 -18 GHz pF fF fF dB dB dB dB dB dB dB dBm
maximum stable power gain; note 1 IC = 20 mA; VC2-E1 = 3 V; f = 900 MHz; Tamb = 25 C IC = 20 mA; VC2-E1 = 3 V; f = 2 GHz; Tamb = 25 C
s 21
2
insertion power gain
IC = 20 mA; VC2-E1 = 3 V; f = 900 MHz; Tamb = 25 C IC = 20 mA; VC2-E1 = 3 V; f = 2 GHz; Tamb = 25 C
s 21 s 12 F IP3 Notes
2
maximum isolation; note 2 noise figure third order intercept point (input)
f = 900 MHz f = 2 GHz IC = 5 mA; VC2-E1 = 3 V; f = 900 MHz; S = opt note 3
2 1. MSG = s 12 s 21 x k - k - 1
2 2 2 1 + s 11 x s 22 - s 12 x s 21 - s 11 - s 22 k = ---------------------------------------------------------------------------------------------------------------2 x s 12 x s 21
2. Maximum isolation is defined as the isolation when S21 of the amplifier is reduced to unity (buffer application). 3. IC =5 mA; VCE = 3 V; RS = 50 ; ZL = opt; Tamb = 25 C; fp = 900 MHz; fq = 902 MHz; measured at f(2p-q) = 904 MHz.
1997 Sep 10
4
Philips Semiconductors
Product specification
NPN wideband cascode transistor
BFC520
handbook, halfpage
1.5
MBG228
handbook, halfpage
12
MBG219
VC2-E1 = 12 V
Ptot (mW) double loaded 1
fT (GHz) 9V 8 6V
single loaded 0.5 4
3V
0 0 50 100 150 Ts (oC) 200
0 1 10 IC (mA)
102
f = 1 GHz; Tamb = 25 C.
Fig.2
Power derating as a function of soldering point temperature; typical values.
Fig.3
Transition frequency as a function of collector current; typical values.
handbook, halfpage
4
MGG219
handbook, halfpage
3
MGG220
F (dB) 3
F (dB) 2 IC = 2 mA
f = 900 MHz
500 MHz 10 mA 1
2
1
0 10-1
0 1 f (GHz) 10 1 10 IC (mA)
102
VC2-E1 = 3 V.
VC2-E1 = 3 V.
Fig.4
Minimum noise figure as a function of frequency; typical values.
Fig.5
Minimum noise figure as a function of collector current; typical values.
1997 Sep 10
5
Philips Semiconductors
Product specification
NPN wideband cascode transistor
BFC520
handbook, halfpage
60
MGG221
120 S21/S12 (dB)
IC = 5 mA 2 mA 80
handbook, halfpage
50
MGG222
100 S21/S12 (dB)
MSG (dB) 40
MSG (dB) f = 500 MHz 40
80
900 MHz
1 mA
30 60
20
40
20 2 GHz 40
0 10-2
10-1
1
f (GHz)
0 10
10 10-1
1
10
IC (mA)
20 102
VC2-E1 = 3 V.
VC2-E1 = 3 V.
Fig.6
Maximum stable gain as a function of frequency; typical values.
Fig.7
Maximum stable gain and isolation as functions of collector current; typical values.
handbook, halfpage
30
MGG223
handbook, halfpage
10
MGG224
S21 (dB) 20
RL = 220
IP3 (dBm) 0
output
50
-10
10
-20 input
0 10-1
1
10
IC (mA)
102
-30 10-1
1
10
IC (mA)
102
VC2-E1 = 3 V; RS = 50 ; XS = XL = opt; f = 900 MHz.
Point tuned for maximum gain with double slug tuners. VC2-E1 = 3 V; f = 900 MHz.
Fig.8
Insertion gain as a function of collector current; typical values.
Fig.9
Third order intercept point as a function of collector current; typical values.
1997 Sep 10
6
Philips Semiconductors
Product specification
NPN wideband cascode transistor
APPLICATION INFORMATION SPICE parameters for any single BFC520 die SEQUENCE No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19(1) 20(1) 21(1) 22 23 24 25 26 27 28 29 30 31 32 33 34 35(1) 36(1) 37(1) 38 Note 1. These parameters have not been extracted, the default values are shown. 1997 Sep 10 7 PARAMETER IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RB IRB RBM RE RC XTB EG XTI CJE VJE MJE TF XTF VTF ITF PTF CJC VJC MJC XCJC TR CJS VJS MJS FC VALUE 1.016 220.1 1.000 48.06 510.0 283.0 2.035 100.7 0.988 1.692 2.352 24.48 1.022 10.00 1.000 10.00 775.3 2.210 0.000 1.110 3.000 1.245 600.0 0.258 8.616 6.788 1.414 110.3 45.01 447.6 189.2 0.071 0.130 543.7 0.000 750.0 0.000 0.780 UNIT fA - - V mA fA - - - V mA aA - A m - eV - pF mV - ps - V mA deg fF mV - - ps F mV - -
handbook, halfpage
BFC520
LP LP LB2 T2
C2
B2
LE2 C1/E2
LP B1 LP LB1 T1 LE1
LP E1
MBG216
Fig.10 Package equivalent circuit SOT353A (inductance only).
Lead and mutual inductances (nH)
LP LB1,2 LE1,2
0.4 0.5 0.8
M(LB1,LE1) M(LB1,LE2)
+0.4 +0.25
E1
35 3.5 2 36
B1
B2
35 35 35
E1
C2
36 2
B2
C1/E2
15
MBG217
C2
Fig.11 Package capacitance (fF) between indicated nodes.
Philips Semiconductors
Product specification
NPN wideband cascode transistor
Typical application circuits
BFC520
andbook, full pagewidth
+VCC
R1 RF output
RF input
MBG226
R1 increases stability (10 to 47 ).
Fig.12 Narrowband amplifier.
handbook, full pagewidth
+VCC
RF output E1 T2
T1 Vtune
E1
MBG227
T1 forms a colpitts oscillator. T2 acts as a buffer amplifier.
Fig.13 VCO/buffer combination.
1997 Sep 10
8
Philips Semiconductors
Product specification
NPN wideband cascode transistor
PACKAGE OUTLINE Plastic surface mounted package; 5 leads
BFC520
SOT353
D
B
E
A
X
y
HE
vMA
5
4
Q
A
A1
1
e1 e
2
bp
3
wM B detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.30 0.20 c 0.25 0.10 D 2.2 1.8 E (2) 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.25 0.15 v 0.2 w 0.2 y 0.1
OUTLINE VERSION SOT353
REFERENCES IEC JEDEC EIAJ SC-88A
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1997 Sep 10
9
Philips Semiconductors
Product specification
NPN wideband cascode transistor
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Short-form specification Limiting values
BFC520
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Sep 10
10
Philips Semiconductors
Product specification
NPN wideband cascode transistor
NOTES
BFC520
1997 Sep 10
11
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
127127/00/03/pp12
Date of release: 1997 Sep 10
Document order number:
9397 750 02888

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